A new ultra-thin electrode material: a step closer to next-generation semiconductors

Image: Operation results of the two-dimensional semiconductor device and the logic device implemented by the joint research team
see After

Credit: Korea Institute of Science and Technology (KIST)

To realize artificial intelligence systems and autonomous driving systems, which we often see in movies, in everyday life, the processors that work like the brains of computers must be able to process more data. . However, silicon-based logic devices, which are essential components of computer processors, have limitations as processing costs and power consumption increase as miniaturization and integration progress.

To overcome these limitations, studies are being carried out on electronic and logic devices based on very thin two-dimensional semiconductors at the atomic layer. However, it is more difficult to control electrical properties by doping in two-dimensional semiconductors than in conventional silicon-based semiconductor devices. Thus, it has been technically difficult to implement various logic devices with two-dimensional semiconductors.

The Korea Institute of Science and Technology (KIST; President: Seok-jin Yoon) announced that a joint research team led by Dr. Do Kyung Hwang of the Center for Optoelectronic Materials and Devices and Professor Kimoon Lee of the Department of Physics of Kunsan National University (chairman: Jang -ho Lee), succeeded in implementing two-dimensional electronic and logic devices based on semiconductors, the electrical properties of which can be freely controlled by developing a new ultra-thin electrode material (Cl- SnSe2).

The joint research team was able to selectively control the electrical properties of solid-state electronic devices using Cl-doped tin diselenide (Cl-SnSe2), a two-dimensional electrode material. It was difficult to implement complementary logic circuits with classical two-dimensional semiconductor devices because they exhibit only the characteristics of N-type or P-type devices due to the pinning phenomenon at the Fermi level. On the other hand, if the electrode material developed by the joint research team is used, it is possible to freely control the characteristics of N-type and P-type devices by minimizing defects with the semiconductor interface. In other words, a single device performs the functions of both N-type and P-type devices. Therefore, there is no need to manufacture N-type and P-type devices separately. Using this device, the joint research team successfully implemented a high-performance, low-power complementary logic circuit capable of performing different logic operations such as NOR and NAND.

Dr. Hwang said, “This development will help accelerate the commercialization of next-generation system technologies such as artificial intelligence systems, which have been difficult to use in practical applications due to technical limitations caused by miniaturization and the high integration of conventional silicon”. semiconductor devices. He also predicted that “the developed two-dimensional electrode material is very thin; therefore, they exhibit high light transmission and flexibility. Therefore, they can be used for next-generation flexible and transparent semiconductor devices.”


KIST was established in 1966 as the first government-funded research institute in Korea to establish national development strategy based on science and technology and disseminate various industrial technologies to promote the development of major industries. KIST now elevates the status of Korean science and technology through the pursuit of world-class innovative research and development. For more information, please visit the KIST website at https://eng.kist.re.kr/kist_eng_renew/

This research was supported by KIST Institutional Program, Nanomaterial Technology Development Project, and Information and Communication Technology Development Project, funded by the Ministry of Science and ICT (Minister Hye-sook Lim). The research results have been published in the international academic journal “Advanced Materials” (IF: 30.849).

Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of press releases posted on EurekAlert! by contributing institutions or for the use of any information through the EurekAlert system.

#ultrathin #electrode #material #step #closer #nextgeneration #semiconductors

Leave a Comment

Your email address will not be published. Required fields are marked *